IGBT comparison table [1] | |||
---|---|---|---|
Device characteristic | Power bipolar | Power MOSFET | IGBT |
Voltage rating | High <1kV | High <1kV | Very high >1kV |
Current rating | High <500A | High >500A | High >500A |
Input drive | Current ratio hFE 20-200 | Voltage VGS 3-10 V | Voltage VGE 4-8 V |
Input impedance | Low | High | High |
Output impedance | Low | Medium | Low |
Switching speed | Slow (µs) | Fast (ns) | Medium |
Cost | Low | Medium | High |
IGBT module (IGBTs and freewheeling diodes) with a rated current of 1,200 A and a maximum voltage of 3,300 V | Opened IGBT module with four IGBTs (half of H-bridge) rated for 400 A600 V | Small IGBT module, rated up to 30 A, up to 900 V | Mitsubishi Electric CM600DU-24NFH IGBT module rated for 600 A1200 V, with the cover removed to show the IGBT dies and freewheeling diodes. |
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